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| Introduction |
| Tetrahedral Amorphous Carbon |
| Head Disk Spacing Trend |
| Formation of ta-C |
| ta-C Structure |
| Microstructure of the ta-C |
| Nano-Indentation Test |
| Friction Coefficient Test |
| Optical Properties |
| sp3 content |
| Film Density |
| Morphology |
| Raman |
| Significance of UV Raman |
| Nano Identation |
| Fretting Test |
| Fretting & Critical Load |
| Ellipsometry Model |
| Optical Properties |
| On Optimal Energy |
| Electronic Transport |
| N Incorporation in ta-C |
| N Background Filling |
| Ion Beam Assisted FCVA |
| Schottky Barrier |
| n+-ta-C/p-Si Junction |
| Electronic |
| Field Emission |
| Surface State |
| Reflected EELS |
| Surface Ion Beam Treatment |
| a-C Field Emission Mechanism |
| Conclusion |
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2.11M |
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| Requirement for Media & Slider Overcoat |
| Areal Density Progress |
| Head Disk Spacing Trend |
| Carbon Coating for Slider/Media |
| Tetrahedral Amorphous Carbon |
| What can ta-C Offer?(as overcoat) |
| ta-C on Heads |
| Pin-Hole Test |
| Deposition Rate VS Arc Current |
| Hardness & Stress VS Arc current |
| Process Stability |
| Process Repeatability with Compensation Mode |
| Film Uniformity |
| Particle distribution on 6 inch wafer |
| ECR-CVD VS FCVA |
| Raman ECR-CVD VS FCVA |
| Nanoindentation |
| Properties of ta-C Raman&AFM |
| Reliabilities Test |
| Nanofilm Production FCVA Features |
| Conclusion |
|
1.06M |
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| Media Structure |
| Carbon Coating |
| ta-C Film for Media |
| Areal Density Progress |
| Head Disk Spacing Trend |
| Film Uniformity |
| 1.5nm Film Uniformity on 2.5" Glass Disk |
| Process Repeatability with Compensation Mode |
| Particle distribution on 6 inch wafer |
| CSS Test |
| Selket Weariness Test |
| Conclusion |
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334K |
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| Road Map of Semiconductor |
| Interconnection in Semiconductor |
| Copper process flow |
| Disadvantages of current technology |
| Future interconnector technology |
| Copper Film by FCVA |
| FCVA Technology |
| Advantages of Cu film by FCVA |
| Cu Seedlayer criteria |
| Comparison |
| Cu Structure |
| AFM images |
| Roughtness |
| Lateral Size of Cu Crystal |
| X-ray Diffraction |
| Resistivity vs Film Thickness |
| Cu Seedlayer comparison |
| Cu Seedlayer by Nanofilm FCVA |
| Summary |
|
1.16M |
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Background |
|
Coating
methods |
|
Advantages
of FCVA |
|
Excellent
target utilisation |
|
Morphology
comparison |
|
Mophology
by AFM |
|
Stoichiometric
coatings |
|
Deposition
rate |
|
Microstructure |
|
Microstructure
vs Refractive index |
|
Optical
refractive index |
|
Hardness
vs Oxygen partial pressure |
|
Hardness
vs Bias |
|
Hardness
vs Temperature |
|
Stress
vs Bias |
|
Stress
vs Temperature |
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Conclusion |
|
373K |
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Transparent
electrode by FCVA |
|
AFM
images of ZnO films deposited |
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PL
spectra of ZnO thin films |
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Raman
shifts of ZnO thin films |
|
XRD
patterns a function of the oxygen flow
rates |
|
HRSEM
images of ZnO films deposited |
|
Absorption
and Transmittance spectra |
|
459K |
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